Manufacturer Part Number
IRLL014TRPBF
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single
Product Features and Performance
RoHS3 Compliant
TO-261-4, TO-261AA Package
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
N-Channel FET Type
Vgs(th) (Max) @ Id: 2V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Product Advantages
RoHS3 Compliant
Wide Operating Temperature Range
High Voltage Capability
Low On-Resistance
Efficient Power Handling
Key Technical Parameters
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
Current Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Quality and Safety Features
RoHS3 Compliant
Wide Operating Temperature Range
Compatibility
Surface Mount Mounting Type
Application Areas
Power Management
Motor Control
Switching Circuits
Industrial Electronics
Product Lifecycle
Currently available
No indication of discontinuation
Several Key Reasons to Choose This Product
RoHS3 Compliant
Wide Operating Temperature Range
High Voltage Capability
Low On-Resistance
Efficient Power Handling
Suitable for various power management, motor control, and switching applications