Manufacturer Part Number
IRLL014NTRPBF
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
55V Drain to Source Voltage (Vdss)
±16V Gate to Source Voltage (Vgs)
140mΩ On-Resistance (Rds(on)) at 2A, 10V
2A Continuous Drain Current (Id) at 25°C
230pF Input Capacitance (Ciss) at 25V
1W Power Dissipation at 25°C
-55°C to 150°C Operating Temperature
Product Advantages
Low On-Resistance for High Efficiency
High Voltage and Current Handling Capability
Small Footprint Surface Mount Package
Key Technical Parameters
MOSFET Technology
SOT-223 Package
Tape & Reel Packaging
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with HEXFET Series
Application Areas
Power Management
Motor Control
Switching Circuits
Product Lifecycle
Current product, no plans for discontinuation
Replacement/upgrade models available if needed
Key Reasons to Choose
Proven reliability and performance of HEXFET series
Suitable for high voltage, high current applications
Compact surface mount package for space-constrained designs
RoHS compliance for environmentally friendly applications