Manufacturer Part Number
IRFP22N60KPBF
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel MOSFET transistor with excellent performance characteristics.
Product Features and Performance
High breakdown voltage of 600V
Low on-resistance of 280mOhm @ 13A, 10V
High continuous drain current of 22A (at 25°C)
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 150nC @ 10V
Product Advantages
Suitable for high-voltage, high-power applications
Efficient power handling with low conduction losses
Reliable and robust design for rugged environments
Easy to drive with a wide gate voltage range of ±30V
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 280mOhm @ 13A, 10V
Continuous Drain Current (Id): 22A (at 25°C)
Input Capacitance (Ciss): 3570pF @ 25V
Power Dissipation (Tc): 370W
Quality and Safety Features
RoHS3 compliant
Reliable and durable TO-247AC package
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Inductive load switching
Inverters
Industrial and medical equipment
Product Lifecycle
This product is an active and widely used component
Replacements and upgrades may be available from the manufacturer
Several Key Reasons to Choose This Product
High breakdown voltage and low on-resistance for efficient power handling
Robust and reliable design for use in rugged environments
Wide operating temperature range for versatile applications
Easy to drive with a wide gate voltage range
RoHS3 compliance for environmental sustainability