Manufacturer Part Number
IRFP22N50APBF
Manufacturer
Vishay / Siliconix
Introduction
High-voltage, high-power N-channel MOSFET
Designed for high-frequency, high-power switching applications
Product Features and Performance
Drain-to-source voltage up to 500 V
Continuous drain current up to 22 A
Low on-resistance of 230 mΩ
Fast switching speed and low gate charge
Suitable for high-frequency, high-power applications
Product Advantages
High power handling capability
Low conduction losses
Efficient switching performance
Reliable and robust design
Key Technical Parameters
Drain-to-source voltage (Vdss): 500 V
Gate-to-source voltage (Vgs): ±30 V
On-resistance (Rds(on)): 230 mΩ
Continuous drain current (Id): 22 A
Input capacitance (Ciss): 3450 pF
Power dissipation (Pd): 277 W
Quality and Safety Features
RoHS3 compliant
TO-247AC package for efficient heat dissipation
Suitable for high-temperature operation up to 150°C
Compatibility
Suitable for high-frequency, high-power switching applications
Compatible with various power electronics and industrial control systems
Application Areas
Switching power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control systems
Product Lifecycle
This product is an active and widely used MOSFET
Replacement or upgrade options are available from Vishay and other manufacturers
Key Reasons to Choose This Product
High power handling and efficiency
Low conduction losses and fast switching speed
Reliable and robust design for high-temperature operation
Compatibility with a wide range of high-power applications
Availability of replacement and upgrade options