Manufacturer Part Number
IRFI510GPBF
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Voltage Rating: 100V
Max Gate-Source Voltage: ±20V
On-Resistance: 540mOhm @ 2.7A, 10V
Continuous Drain Current: 4.5A @ 25°C
Input Capacitance: 180pF @ 25V
Power Dissipation: 27W
Operating Temperature: -55°C to 175°C
Product Advantages
Robust design
High power handling capability
Low on-resistance
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 540mOhm
Continuous Drain Current (Id): 4.5A
Input Capacitance (Ciss): 180pF
Power Dissipation: 27W
Operating Temperature: -55°C to 175°C
Quality and Safety Features
RoHS3 Compliant
Isolated Tab Package (TO-220-3)
Compatibility
Through-hole mounting
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial controls
Product Lifecycle
Currently available
No indication of discontinuation
Replacement options may be available
Key Reasons to Choose
Reliable high-power performance
Low on-resistance for efficient operation
Wide operating temperature range
Robust package design
RoHS compliance for environmental safety