IRFI530NPBF - Infineon Technologies

Manufacturer Part Number

IRFI530NPBF

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Single Transistor MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

Product Features and Performance

N-Channel MOSFET

100V Drain-to-Source Voltage (Vdss)

110mOhm Maximum On-Resistance (Rds(on)) at 6.6A, 10V

12A Continuous Drain Current (Id) at 25°C

640pF Maximum Input Capacitance (Ciss) at 25V

41W Maximum Power Dissipation at 25°C

Product Advantages

High power handling capability

Low on-resistance for efficient power conversion

Wide operating temperature range of -55°C to 175°C

Key Technical Parameters

Voltage: Vdss = 100V, Vgs(max) = ±20V

Current: Id = 12A at 25°C

Resistance: Rds(on) = 110mOhm at 6.6A, 10V

Capacitance: Ciss = 640pF at 25V

Power: Pd = 41W at 25°C

Quality and Safety Features

RoHS3 compliant

TO-220AB Full-Pak package for reliable thermal performance

Compatibility

Through-hole mounting

Application Areas

Power supplies

Motor drives

Inverters

Switching regulators

Product Lifecycle

Current product, no discontinuation or replacement plans

Key Reasons to Choose This Product

High power handling capacity

Low on-resistance for efficient power conversion

Wide operating temperature range

Reliable TO-220AB package

RoHS3 compliance for environmental safety