Manufacturer Part Number
IRFD9014PBF
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
4-HVMDIP Package
Operating Temperature: -55°C to 175°C
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds(on)): 500mΩ @ 660mA, 10V
MOSFET Technology
Continuous Drain Current (Id): 1.1A @ 25°C
Input Capacitance (Ciss): 270pF @ 25V
Power Dissipation: 1.3W @ 25°C
Product Advantages
Stable performance over wide temperature range
Low on-resistance for efficient power conversion
High voltage and current handling capability
Key Technical Parameters
P-Channel MOSFET
Threshold Voltage (Vgs(th)): 4V @ 250μA
Gate Charge (Qg): 12nC @ 10V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Through-hole mounting
Application Areas
Power conversion and control circuits
Amplifier and switching applications
Product Lifecycle
Actively available
Replacement or upgrade options may be available
Key Reasons to Choose
Reliable performance across wide temperature range
Efficient power handling with low on-resistance
Flexibility in power conversion and control circuits