Manufacturer Part Number
IRFD320PBF
Manufacturer
Vishay / Siliconix
Introduction
The IRFD320PBF is a discrete N-channel MOSFET transistor from Vishay/Siliconix.
Product Features and Performance
400V drain-to-source voltage rating
8Ω maximum on-resistance at 210mA, 10V
490mA continuous drain current at 25°C
410pF maximum input capacitance at 25V
1W maximum power dissipation at 25°C
Product Advantages
High voltage handling
Low on-resistance for improved efficiency
Suitable for high-power switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 400V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.8Ω @ 210mA, 10V
Continuous Drain Current (Id): 490mA at 25°C
Input Capacitance (Ciss): 410pF @ 25V
Power Dissipation (Pd): 1W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Through-hole 4-DIP (0.300", 7.62mm) package
Application Areas
High-power switching applications
Power supplies
Motor control
Inverters
Product Lifecycle
Current product offering, no discontinuation or obsolescence concerns
Replacement/upgrade options may be available from Vishay/Siliconix
Key Reasons to Choose this Product
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Suitable for high-temperature and high-power applications
Reliable and RoHS-compliant design from a reputable manufacturer
