Manufacturer Part Number
IRFBC20PBF
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
600V Drain-Source Voltage
2A Continuous Drain Current
4Ohm On-Resistance
50W Power Dissipation
-55°C to 150°C Operating Temperature
350pF Input Capacitance
18nC Gate Charge
Product Advantages
High Voltage Capability
Low On-Resistance
High Power Handling
Wide Operating Temperature Range
Key Technical Parameters
Drain-Source Voltage: 600V
Gate-Source Voltage: ±20V
On-Resistance: 4.4Ohm
Drain Current: 2.2A
Power Dissipation: 50W
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
TO-220AB Package
Compatibility
Compatible with 600V MOSFET applications
Application Areas
Power Supplies
Motor Drives
Inverters
Switching Regulators
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose
High voltage and current capability
Low on-resistance for efficient power conversion
Robust design for wide temperature operation
Proven reliability in industrial applications