Manufacturer Part Number
IRFBA1405PPBF
Manufacturer
Infineon Technologies
Introduction
High-performance HEXFET power MOSFET
Product Features and Performance
N-channel MOSFET with very low on-resistance
Suitable for high-current, high-frequency switching applications
Capable of handling continuous drain current up to 174A at 25°C case temperature
Extremely low gate charge and gate-source threshold voltage
Product Advantages
Excellent switching characteristics for efficient power conversion
High power density and efficiency
Robust and reliable design
Key Technical Parameters
Drain-source voltage (Vdss): 55V
Maximum gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 5mΩ @ 101A, 10V
Input capacitance (Ciss): 5480pF @ 25V
Power dissipation (Tc): 330W
Quality and Safety Features
Operating temperature range: -40°C to 175°C
Rugged SUPER-220 (TO-273AA) package
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
High-current power conversion circuits
Product Lifecycle
This product is currently in active production
Replacement or upgraded models may become available in the future as technology evolves
Key Reasons to Choose This Product
Exceptional performance and efficiency in high-current, high-frequency switching applications
Robust and reliable design for demanding industrial and automotive environments
High power density and thermal management capabilities
Extensive experience and expertise of Infineon Technologies in power semiconductor technology
IRFBA1405PInfineon TechnologiesMOSFET N-CH 55V 174A SUPER-220