Manufacturer Part Number
CPV363M4U
Manufacturer
Vishay General Semiconductor – Diodes Division
Introduction
Three-phase Insulated Gate Bipolar Transistor (IGBT) Module
Product Features and Performance
Rated for 36W power handling
Temperature range of -40°C to 150°C
Input capacitance of 1.1nF at 30V
Collector-emitter breakdown voltage of 600V
Collector current rating of 13A
Collector-emitter saturation voltage of 2V at 15V gate-emitter voltage and 13A collector current
Product Advantages
Suitable for three-phase inverter applications
Compact 19-SIP (13 leads) package
High power and thermal performance
Key Technical Parameters
Power rating: 36W
Operating temperature range: -40°C to 150°C
Input capacitance: 1.1nF at 30V
Collector-emitter breakdown voltage: 600V
Collector current rating: 13A
Collector-emitter saturation voltage: 2V at 15V gate-emitter voltage and 13A collector current
Quality and Safety Features
RoHS non-compliant
Compatibility
Suitable for three-phase inverter applications
Application Areas
Three-phase inverter systems
Industrial motor drives
Power supplies
Uninterruptible power supplies (UPS)
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Key Reasons to Choose This Product
High power and thermal performance for three-phase inverter applications
Compact 19-SIP (13 leads) package
Suitable operating temperature range of -40°C to 150°C
CPV363M4FPBFElectro-Films (EFI) / VishayIGBT Module