Manufacturer Part Number
CPV363M4K
Manufacturer
Vishay General Semiconductor – Diodes Division
Introduction
IGBT (Insulated Gate Bipolar Transistor) Module
Product Features and Performance
Three-phase inverter configuration
High power density
Low conduction and switching losses
High switching speed
Compact design
Product Advantages
Efficient power conversion
Reliable performance
Suitable for various industrial applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600 V
Collector Current (Max): 11 A
Collector-Emitter Saturation Voltage: 2 V @ 15 V, 11 A
Input Capacitance: 740 pF @ 30 V
Operating Temperature Range: -40°C to 150°C
Quality and Safety Features
RoHS non-compliant
Suitable for high-temperature environments
Compatibility
Suitable for various industrial applications, such as motor drives, power supplies, and inverters
Application Areas
Industrial automation
Power electronics
Motor control
Product Lifecycle
Current product offering
Availability of replacements and upgrades may vary, so please check with the manufacturer
Several Key Reasons to Choose This Product
Efficient power conversion with low losses
Reliable performance in high-temperature environments
Compact design for space-constrained applications
Suitable for a wide range of industrial applications
CPV363M4FPBFElectro-Films (EFI) / VishayIGBT Module