BYG21M-E3/TR3 - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

BYG21M-E3/TR3

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-voltage fast-recovery rectifier diode

Product Features and Performance

Avalanche technology

Fast reverse recovery time of 120 ns

Forward voltage of 1.6 V at 1.5 A current

Reverse leakage current of 1 A at 1000 V

Operating temperature range of -55°C to 150°C

Suitable for high-frequency, high-power switching applications

Product Advantages

Fast switching speed for improved efficiency

High reverse voltage capability

Excellent thermal performance

Key Technical Parameters

Voltage DC Reverse (Vr) (Max): 1000 V

Current Average Rectified (Io): 1.5 A

Reverse Recovery Time (trr): 120 ns

Speed: Fast Recovery =< 500ns, > 200mA (Io)

Quality and Safety Features

RoHS3 compliant

Meets industry standards for reliability and safety

Compatibility

Surface mount package (DO-214AC, SMA)

Tape and reel packaging for automated assembly

Application Areas

High-frequency, high-power switching applications

Power supplies, inverters, and converters

Industrial, automotive, and telecommunications equipment

Product Lifecycle

This product is currently available and actively supported by the manufacturer.

Replacement or upgraded products may be available in the future.

Several Key Reasons to Choose This Product

Fast switching speed for improved efficiency in high-frequency applications

High reverse voltage capability for use in high-power circuits

Excellent thermal performance for reliable operation in demanding environments

Surface mount packaging and tape and reel availability for automated assembly

RoHS3 compliance for use in environmentally-conscious applications