Manufacturer Part Number
BYG22B-E3/TR
Manufacturer
Vishay General Semiconductor – Diodes Division
Introduction
High-speed, high-current silicon rectifier diode for general-purpose power applications
Product Features and Performance
Avalanche technology for improved reliability
Low forward voltage drop
Fast recovery time of 25 ns
Reverse voltage rating up to 100 V
Average rectified current capacity of 2 A
Product Advantages
Excellent thermal management
High surge current capability
Compact and space-saving design
Reliable performance in demanding applications
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 100 V
Current Average Rectified (Io): 2 A
Current Reverse Leakage @ Vr: 1 A @ 100 V
Voltage Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Reverse Recovery Time (trr): 25 ns
Operating Temperature Junction: -55°C ~ 150°C
Quality and Safety Features
RoHS3 compliant
Stable and reliable performance
Stringent quality control measures
Compatibility
DO-214AC (SMA) package
Surface mount assembly
Application Areas
General-purpose power applications
Rectifier circuits
Power supplies
Industrial electronics
Automotive electronics
Product Lifecycle
Current production model
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent reliability and thermal management
Fast recovery time for efficient power conversion
High reverse voltage and current handling capability
Compact and space-saving design
RoHS3 compliance for environmental responsibility