Manufacturer Part Number
SSM3K37MFV,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
20V Drain to Source Voltage (Vdss)
±10V Gate to Source Voltage (Vgs)
2Ω Max On-Resistance (Rds On)
250mA Continuous Drain Current (Id)
12pF Input Capacitance (Ciss)
150mW Power Dissipation
Product Advantages
Compact Surface Mount Package
Suitable for Low-Power Switching Applications
Low On-Resistance for Efficient Power Conversion
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
1V Gate Threshold Voltage (Vgs(th))
5V to 4.5V Drive Voltage Range
Quality and Safety Features
RoHS3 Compliant
150°C Junction Temperature (TJ)
Compatibility
Surface Mount (SMD) Applications
Application Areas
Power Management Circuits
Switching Power Supplies
LED Drivers
Audio Amplifiers
Product Lifecycle
Currently in Production
No Known Discontinuation Plans
Replacement/Upgrade Parts Available
Key Reasons to Choose
Reliable MOSFET Performance
Compact and Efficient Surface Mount Design
Suitable for Low-Power, High-Efficiency Applications
Wide Operating Temperature Range
