Manufacturer Part Number
SSM3K37FS,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation (TAEC)
Introduction
Discrete Semiconductor Product - Transistor - MOSFET - Single
Product Features and Performance
N-Channel MOSFET
Low on-resistance (Rds(on) = 2.2Ω @ 100mA, 4.5V)
Low input capacitance (Ciss = 12pF @ 10V)
Low power dissipation (100mW @ Ta)
Wide drain-source voltage range (20V)
Wide operating temperature range (150°C)
Product Advantages
Optimized for low-power applications
Suitable for use in power management and switching circuits
Compact surface mount package (SC-75, SOT-416)
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±10V
Continuous Drain Current (Id) @ 25°C: 200mA
On-Resistance (Rds(on)) @ 100mA, 4.5V: 2.2Ω
Input Capacitance (Ciss) @ 10V: 12pF
Power Dissipation (Max) @ Ta: 100mW
Threshold Voltage (Vgs(th)) @ 1mA: 1V
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Compatible with various power management and switching applications
Application Areas
Power management circuits
Switching circuits
Low-power electronic devices
Product Lifecycle
Current product offering
No discontinuation or replacement information available
Key Reasons to Choose This Product
Optimized for low-power, high-efficiency applications
Compact surface mount package for space-constrained designs
Reliable MOSFET technology with low on-resistance and input capacitance
Wide operating voltage and temperature range for versatile applications
SSM3K36MFVL3F TTOS