Manufacturer Part Number
SSM3J56ACT,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation (TAEC)
Introduction
High-performance P-channel MOSFET for power management applications
Product Features and Performance
20V drain-source voltage
390mΩ maximum on-resistance
4A continuous drain current
500mW maximum power dissipation
Low gate charge of 1.6nC at 4.5V
Wide operating temperature range up to 150°C
Product Advantages
Excellent power efficiency and thermal performance
Suitable for power management and control applications
Compact surface-mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 390mΩ
Continuous Drain Current (Id): 1.4A
Input Capacitance (Ciss): 100pF
Power Dissipation (Pd): 500mW
Operating Temperature Range: -55°C to +150°C
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering in tape and reel packaging
Compatibility
Designed for power management and control applications
Compatible with various power supply and control circuits
Application Areas
Power management systems
Motor control
DC-DC converters
Battery chargers
LED drivers
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact surface-mount package for space-constrained designs
Suitable for a wide range of power management and control applications
Reliable and RoHS3 compliant for various industrial and consumer products
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