Manufacturer Part Number
SSM3J46CTB(TPL3)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
Discrete Semiconductor Product
P-Channel MOSFET Transistor
Product Features and Performance
20V Drain to Source Voltage
5V and 4.5V Drive Voltage Ranges
103mOhm On-Resistance at 1.5A, 4.5V
2A Continuous Drain Current at 25°C
290pF Input Capacitance at 10V
7nC Gate Charge at 4.5V
150°C Maximum Junction Temperature
Product Advantages
Low On-Resistance for High Efficiency
Fast Switching Performance
Compact Surface Mount Package
Key Technical Parameters
Vdss: 20V
Vgs (Max): ±8V
Rds On (Max): 103mOhm
Id (Max): 2A
Ciss (Max): 290pF
Vgs(th) (Max): 1V
Qg (Max): 4.7nC
Quality and Safety Features
RoHS Compliant
Compatibility
Suitable for use in various electronic circuits and systems
Application Areas
Power management
Switching applications
Driver circuits
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades may be available
Key Reasons to Choose
Excellent performance characteristics
Low on-resistance for high efficiency
Compact and space-saving design
RoHS compliance for environmental responsibility
