Manufacturer Part Number
SSM3J332R,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
P-Channel MOSFET with low on-resistance and small package
Product Features and Performance
Low on-resistance of 42 mΩ @ 5 A, 10 V
High current capacity of 6 A (Ta)
Low input capacitance of 560 pF @ 15 V
Low gate charge of 8.2 nC @ 4.5 V
Wide operating temperature range up to 150°C (TJ)
Product Advantages
Excellent power efficiency
Compact and space-saving design
Reliable performance in high-temperature environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs): ±12 V
Continuous Drain Current (Id): 6 A
On-Resistance (Rds(on)): 42 mΩ
Quality and Safety Features
RoHS3 compliant
Meets safety and reliability standards
Compatibility
Compatible with various electronic devices and systems
Application Areas
Power management circuits
Motor control systems
Switching power supplies
Battery chargers
Product Lifecycle
Currently in active production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact and space-saving design
Reliable operation in high-temperature environments
Meets industry safety and reliability standards
