Manufacturer Part Number
SSM3J331R,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
P-Channel MOSFET Transistor
Product Features and Performance
Low on-resistance of 55 mOhm at 3A, 4.5V
Fast switching speed
High drain current capability of 4A at 25°C
Low input capacitance of 630 pF at 10V
Low power dissipation of 1W at 25°C
Operating temperature range up to 150°C
Product Advantages
Excellent energy efficiency
Robust performance under high temperatures
Compact and space-saving design
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±8V
Threshold Voltage (Vgs(th)): 1V at 1mA
On-Resistance (Rds(on)): 55 mOhm at 3A, 4.5V
Drain Current (Id): 4A at 25°C
Input Capacitance (Ciss): 630 pF at 10V
Power Dissipation (Pd): 1W at 25°C
Quality and Safety Features
RoHS3 compliant
Reliable performance under high temperatures
Compatibility
Surface mount package (SOT-23-3 Flat Leads)
Suitable for a wide range of electronic applications
Application Areas
Power management circuits
Switching applications
Motor control
General purpose amplifiers
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent energy efficiency and thermal performance
Compact and space-saving design
Robust and reliable operation
Suitable for a wide range of electronic applications
Ongoing product support and potential future upgrades
