Manufacturer Part Number
2SC5200N(S1,E,S)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
The 2SC5200N(S1,E,S) is a high-power NPN bipolar junction transistor (BJT) designed for use in a variety of power electronics applications.
Product Features and Performance
High power handling capability up to 150 watts
High voltage rating of up to 230 volts collector-emitter breakdown voltage
High current rating of up to 15 amps collector current
High frequency transistor with a transition frequency of 30 MHz
Rugged and reliable through-hole package design
Product Advantages
Excellent power handling and high voltage/current capabilities
High-frequency operation suitable for switching and amplifier circuits
Robust through-hole package for reliable performance
Key Technical Parameters
Power Rating: 150 watts
Collector-Emitter Breakdown Voltage: 230 volts
Collector Current: 15 amps
Transition Frequency: 30 MHz
DC Current Gain: minimum 80 @ 1A, 5V
Quality and Safety Features
RoHS3 compliant for environmental safety
High operating temperature up to 150°C
Compatibility
Compatible with standard TO-3P(N) package and through-hole mounting
Application Areas
Power amplifiers
Switching power supplies
Motor drives
Industrial control systems
Audio power output stages
Product Lifecycle
Current production part, no discontinuation plans at this time
Replacements and upgrades may be available from Toshiba
Key Reasons to Choose This Product
Exceptional power handling and high voltage/current capability
High-frequency performance suitable for a wide range of applications
Robust and reliable through-hole package design
RoHS3 compliance for environmental safety
Ongoing availability and potential for replacements/upgrades
2SC5200-O/2SA1943-OTAEC Product (Toshiba Electronic Devices and Stora