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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single2SC5200-O(Q)
Toshiba Semiconductor and Storage
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See specifications for product details.

2SC5200-O(Q) - Toshiba Semiconductor and Storage

Manufacturer Part Number
2SC5200-O(Q)
Manufacturer
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Allelco Part Number
32D-2SC5200-O(Q)
ECAD Model
Parts Description
TRANS NPN 230V 15A TO3P
Detailed Description
Package
TO-3PL
Data sheet
2SC5200-O(Q).pdf
RoHs Status
ROHS3 Compliant
In stock: 23575

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Quantity

Specifications

2SC5200-O(Q) Tech Specifications
Toshiba Semiconductor and Storage - 2SC5200-O(Q) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage - 2SC5200-O(Q)

Product Attribute Attribute Value  
Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation)  
Voltage - Collector Emitter Breakdown (Max) 230 V  
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A  
Transistor Type NPN  
Supplier Device Package TO-3P(L)  
Series -  
Power - Max 150 W  
Package / Case TO-3PL  
Product Attribute Attribute Value  
Package Tube  
Operating Temperature 150°C (TJ)  
Mounting Type Through Hole  
Frequency - Transition 30MHz  
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A, 5V  
Current - Collector Cutoff (Max) 5µA (ICBO)  
Current - Collector (Ic) (Max) 15 A  
Base Product Number 2SC5200  

Parts Introduction

Manufacturer Part Number

2SC5200-O(Q)

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Introduction

High-power NPN silicon bipolar transistor for use in audio amplifiers and switching power supplies.

Product Features and Performance

Capable of handling up to 150W of power

High voltage rating of up to 230V

High current capability of up to 15A continuous collector current

High current gain of at least 80 at 1A, 5V

Transition frequency of 30MHz

Product Advantages

Robust and reliable design for high-power applications

Excellent thermal dissipation characteristics

Proven performance in audio and power supply circuits

Key Technical Parameters

Power Rating: 150W

Collector-Emitter Breakdown Voltage: 230V

Collector Current (Max): 15A

Current Gain (hFE): Minimum of 80 @ 1A, 5V

Transition Frequency: 30MHz

Quality and Safety Features

RoHS3 compliant

Packaged in a reliable and thermally efficient TO-3P(L) package

Compatibility

Through-hole mounting for easy installation

Application Areas

High-power audio amplifiers

Switching power supplies

Industrial and automotive electronics

Product Lifecycle

This product is an established and widely-used design

Replacement and upgrade options are available from the manufacturer

Key Reasons to Choose This Product

Proven performance and reliability in high-power applications

Excellent thermal management capabilities

Wide range of technical parameters to suit diverse design requirements

RoHS compliance for environmentally-friendly use

Availability of replacement and upgrade options

Parts with Similar Specifications

The three parts on the right have similar specifications to Toshiba Semiconductor and Storage 2SC5200-O(Q)

Product Attribute 2SC5200-O(Q) 2SC5200OTU 2SC5200N(S1,E,S) 2SC5200RTU
Part Number 2SC5200-O(Q) 2SC5200OTU 2SC5200N(S1,E,S) 2SC5200RTU
Manufacturer Toshiba Semiconductor and Storage onsemi Toshiba Semiconductor and Storage onsemi
Base Product Number 2SC5200 2SC5200 2SC5200 -
Frequency - Transition 30MHz 30MHz 30MHz 30MHz
Package / Case TO-3PL TO-264-3, TO-264AA TO-3P-3, SC-65-3 TO-264-3, TO-264AA
Mounting Type Through Hole Through Hole Through Hole Through Hole
Power - Max 150 W 150 W 150 W 150 W
Series - - - -
Package Tube Tube Tube Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A, 5V 80 @ 1A, 5V 80 @ 1A, 5V 55 @ 7A, 5V
Operating Temperature 150°C (TJ) -50°C ~ 150°C (TJ) 150°C (TJ) -50°C ~ 150°C (TJ)
Voltage - Collector Emitter Breakdown (Max) 230 V 250 V 230 V 250 V
Current - Collector (Ic) (Max) 15 A 17 A 15 A 17 A
Current - Collector Cutoff (Max) 5µA (ICBO) 5µA (ICBO) 5µA (ICBO) 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A 3V @ 800mA, 8A 3V @ 800mA, 8A 3V @ 800mA, 8A
Transistor Type NPN NPN NPN NPN
Supplier Device Package TO-3P(L) TO-264-3 TO-3P(N) TO-264-3

Shipment

Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

Delivery Cost

  1. Use your express account for shipment if you have one.
  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Your Faithful Supply Chain Partner -

Contact us if you have any questions.

  1. Phone
    +00852 9146 4856

Certifications & Memberships

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Toshiba Semiconductor and Storage

2SC5200-O(Q)

Toshiba Semiconductor and Storage
32D-2SC5200-O(Q)

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