Manufacturer Part Number
2SC5200-O(Q)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
High-power NPN silicon bipolar transistor for use in audio amplifiers and switching power supplies.
Product Features and Performance
Capable of handling up to 150W of power
High voltage rating of up to 230V
High current capability of up to 15A continuous collector current
High current gain of at least 80 at 1A, 5V
Transition frequency of 30MHz
Product Advantages
Robust and reliable design for high-power applications
Excellent thermal dissipation characteristics
Proven performance in audio and power supply circuits
Key Technical Parameters
Power Rating: 150W
Collector-Emitter Breakdown Voltage: 230V
Collector Current (Max): 15A
Current Gain (hFE): Minimum of 80 @ 1A, 5V
Transition Frequency: 30MHz
Quality and Safety Features
RoHS3 compliant
Packaged in a reliable and thermally efficient TO-3P(L) package
Compatibility
Through-hole mounting for easy installation
Application Areas
High-power audio amplifiers
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
This product is an established and widely-used design
Replacement and upgrade options are available from the manufacturer
Key Reasons to Choose This Product
Proven performance and reliability in high-power applications
Excellent thermal management capabilities
Wide range of technical parameters to suit diverse design requirements
RoHS compliance for environmentally-friendly use
Availability of replacement and upgrade options
2SC5198/C5198TAEC Product (Toshiba Electronic Devices and Stora