BC807-40 - Taiwan Semiconductor Corporation

Manufacturer Part Number

BC807-40

Manufacturer

Taiwan Semiconductor

Introduction

Bipolar Junction Transistor (BJT)

Single Transistor

Product Features and Performance

RoHS3 Compliant

SOT-23 Package

Operates in the temperature range of -55°C to 150°C

Maximum Power Dissipation of 300 mW

Maximum Collector-Emitter Breakdown Voltage of 45 V

Maximum Collector Current of 500 mA

Maximum Collector Cutoff Current of 100 nA

Collector-Emitter Saturation Voltage of 700 mV @ 50 mA, 500 mA

Minimum DC Current Gain (hFE) of 250 @ 100 mA, 1 V

Transition Frequency of 100 MHz

Product Advantages

RoHS3 Compliance

Small and compact SOT-23 package

Wide operating temperature range

High power handling capability

High breakdown voltage

High collector current capability

Low saturation voltage

High current gain

High transition frequency

Key Technical Parameters

Power Dissipation

Collector-Emitter Breakdown Voltage

Collector Current

Collector Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Gain

Transition Frequency

Quality and Safety Features

RoHS3 Compliance

Compatibility

Surface Mount Technology (SMT) compatible

Application Areas

General-purpose amplifiers and switches

Analog and digital circuits

Power management

Telecommunications

Consumer electronics

Product Lifecycle

The BC807-40 is an active and widely available product. There are no plans for discontinuation, and replacement or upgrade options are readily available.

Key Reasons to Choose This Product

RoHS3 compliance for environmental responsibility

Small and compact SOT-23 package for space-constrained designs

Wide operating temperature range for diverse applications

High power handling, voltage, and current capabilities for demanding requirements

Low saturation voltage and high current gain for efficient performance

High transition frequency for high-speed operations

Surface mount compatibility for automated assembly

Widespread availability and ongoing product support