Manufacturer Part Number
BC807-40,215
Manufacturer
NXP Semiconductors
Introduction
High-performance PNP transistor for general-purpose applications
Product Features and Performance
High DC current gain (hFE)
High transition frequency (fT)
Low collector-emitter saturation voltage (VCE(sat))
Low collector-emitter leakage current (ICEO)
Compact surface-mount package
Product Advantages
Suitable for a wide range of general-purpose applications
Excellent electrical characteristics for efficient circuit performance
Space-saving surface-mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 45V
Collector Current (IC): 500mA
Collector-Emitter Saturation Voltage (VCE(sat)): 700mV @ 50mA, 500mA
DC Current Gain (hFE): 250 @ 100mA, 1V
Transition Frequency (fT): 80MHz
Quality and Safety Features
Automotive-qualified (AEC-Q101)
Robust TO-236AB package
High temperature operation up to 150°C
Compatibility
Suitable for a wide range of general-purpose electronic applications
Application Areas
Amplifiers
Switches
Drivers
General-purpose electronics
Product Lifecycle
Currently available
No known discontinuation plans
Several Key Reasons to Choose This Product
Excellent electrical characteristics for efficient circuit performance
Compact surface-mount package for space-saving design
Automotive-qualified for reliable operation in harsh environments
Wide operating temperature range up to 150°C