Manufacturer Part Number
STS9D8NH3LL
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Array
Product Features and Performance
2 N-Channel (Dual) MOSFET
30V Drain to Source Voltage (Vdss)
22mOhm Max Rds On @ 4A, 10V
8A, 9A Continuous Drain Current (Id) @ 25°C
857pF Max Input Capacitance (Ciss) @ 25V
1V Max Vgs(th) @ 250A
10nC Max Gate Charge (Qg) @ 4.5V
Product Advantages
Logic Level Gate
ROHS3 Compliant
Surface Mount Packaging
Key Technical Parameters
MOSFET (Metal Oxide) Technology
150°C Max Operating Temperature (TJ)
2W Max Power
Quality and Safety Features
ROHS3 Compliant
Compatibility
8-SOIC Package
Application Areas
Suitable for a variety of electronic circuits and applications requiring high-performance, low on-resistance MOSFETs
Product Lifecycle
Current production, no known plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High performance, low on-resistance MOSFET
Dual N-Channel configuration for efficient circuit design
Logic level gate for easy control
Surface mount packaging for compact integration
ROHS compliance for environmental responsibility
Backed by the reliability and technical expertise of STMicroelectronics