Manufacturer Part Number
STS8DNH3LL
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Array
Product Features and Performance
2 N-Channel MOSFET (Dual Configuration)
30V Drain to Source Voltage (Vdss)
22mOhm Max Rdson @ 4A, 10V
8A Continuous Drain Current (Id) @ 25°C
857pF Max Input Capacitance (Ciss) @ 25V
1V Max Gate Threshold Voltage (Vgs(th)) @ 250uA
10nC Max Gate Charge (Qg) @ 4.5V
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) Technology
Logic Level Gate
Product Advantages
Compact 8-SOIC (0.154", 3.90mm Width) Surface Mount Package
RoHS3 Compliant
Tape and Reel Packaging
150°C Maximum Junction Temperature (Tj)
2W Maximum Power Dissipation
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Rdson (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Id (Continuous Drain Current) @ 25°C: 8A
Ciss (Input Capacitance) (Max) @ Vds: 857pF @ 25V
Vgs(th) (Gate Threshold Voltage) (Max) @ Id: 1V @ 250uA
Qg (Gate Charge) (Max) @ Vgs: 10nC @ 4.5V
Quality and Safety Features
RoHS3 Compliant
150°C Maximum Junction Temperature (Tj)
Compatibility
Surface Mount (8-SOIC) Package
Compatible with STripFET III Series
Application Areas
General Power Management
Motor Control
Switching Power Supplies
Automotive Electronics
Product Lifecycle
Current Production
Replacement/Upgrade Parts Available
Key Reasons to Choose This Product
High Performance N-Channel MOSFET Array
Excellent Power Handling Capability (8A Continuous, 2W Max)
Low On-Resistance (22mOhm Max)
Compact Surface Mount Packaging
RoHS3 Compliance
Wide Operating Temperature Range (-55°C to 150°C)
Proven STMicroelectronics Quality and Reliability
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