STS1NK60Z - STMicroelectronics

Manufacturer Part Number

STS1NK60Z

Manufacturer

STMicroelectronics

Introduction

N-channel power MOSFET transistor

Product Features and Performance

Drain to Source Voltage (Vdss) of 600 V

Maximum Gate-Source Voltage (Vgs) of ±30 V

On-State Resistance (Rds(on)) of 15 Ω @ 400 mA, 10 V

Continuous Drain Current (Id) of 250 mA @ 25°C (Tc)

Input Capacitance (Ciss) of 94 pF @ 25 V

Power Dissipation (Ptot) of 2 W (Tc)

Operating Temperature range of -55°C to 150°C

Product Advantages

Excellent high-voltage performance

Low on-state resistance

High power and temperature capabilities

Key Technical Parameters

MOSFET technology

N-Channel

Threshold Voltage (Vgs(th)) of 4.5 V @ 50 A

Gate Charge (Qg) of 6.9 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

8-SOIC package

Compatibility

Compatible with various high-voltage, high-power applications

Application Areas

Suitable for use in high-voltage, high-power circuits and systems

Product Lifecycle

Current product, no plans for discontinuation

Replacement or upgrade options available if needed

Several Key Reasons to Choose This Product

Excellent high-voltage performance and low on-state resistance

Broad temperature and power capabilities

RoHS3 compliance for environmental safety

Compatibility with a wide range of high-voltage, high-power applications