Manufacturer Part Number
STS1HNK60
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor for power applications
Product Features and Performance
600V Drain-Source Voltage
300mA Continuous Drain Current
5Ω Maximum On-State Resistance
156pF Maximum Input Capacitance
2W Maximum Power Dissipation
Wide Operating Temperature Range: -65°C to 150°C
Product Advantages
Compact 8-SOIC surface mount package
SuperMESH technology for high performance
Suitable for a variety of power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 8.5Ω
Drain Current (Id): 300mA
Input Capacitance (Ciss): 156pF
Power Dissipation (Ptot): 2W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power conversion circuits and systems
Application Areas
Power supplies
Motor drives
Lighting and industrial controls
Telecommunications equipment
Product Lifecycle
This product is currently in production and available
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and current capabilities
Low on-state resistance for efficient power conversion
Compact surface mount package
Wide operating temperature range
Reliable performance and RoHS compliance
Suitability for a variety of power electronics applications