Manufacturer Part Number
STQ1HNK60R-AP
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor for general-purpose applications.
Product Features and Performance
600V Drain to Source Voltage
5Ohm Rds(on) @ 500mA, 10V
400mA Continuous Drain Current (Tc)
156pF Input Capacitance (Ciss) @ 25V
3W Power Dissipation (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
Excellent performance and reliability
Low on-state resistance
High voltage capability
Suitable for a wide range of applications
Key Technical Parameters
N-Channel MOSFET
600V Drain to Source Voltage
5Ohm Rds(on) @ 500mA, 10V
400mA Continuous Drain Current (Tc)
156pF Input Capacitance (Ciss) @ 25V
3W Power Dissipation (Tc)
Quality and Safety Features
RoHS3 Compliant
TO-92-3 Package
Compatibility
TO-226-3, TO-92-3 (TO-226AA) Package
SuperMESH Series
Application Areas
General-purpose applications
Power electronics
Industrial control
Automotive electronics
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance and reliability
Low on-state resistance
High voltage capability
Wide operating temperature range
Suitable for a variety of applications