Manufacturer Part Number
STPSC10H065G-TR
Manufacturer
STMicroelectronics
Introduction
This product is a Schottky diode in a DPAK package, designed for high-efficiency power conversion applications.
Product Features and Performance
Silicon Carbide (SiC) technology for fast switching and low power losses
Low forward voltage drop of 1.75V at 10A
Zero reverse recovery time
Operates at high junction temperatures up to 175°C
Low capacitance of 480pF at 0V, 1MHz
High reverse voltage rating of 650V
Product Advantages
Excellent efficiency and thermal performance
Compact DPAK package for space-constrained designs
Reliable and robust construction
Key Technical Parameters
Reverse Leakage Current: 100μA at 650V
Forward Voltage: 1.75V at 10A
Junction Temperature Range: -40°C to 175°C
Reverse Recovery Time: 0ns
Capacitance: 480pF at 0V, 1MHz
Reverse Voltage: 650V
Average Rectified Current: 10A
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount DPAK package
Application Areas
Power supplies
Inverters
Motor drives
Power factor correction
Welding equipment
Solar inverters
Product Lifecycle
This product is currently in production and availability is good. There are no immediate plans for discontinuation, and no known replacements or upgrades at this time.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance due to SiC technology
Compact DPAK package for space-constrained designs
Reliable and robust construction for high-reliability applications
High reverse voltage rating of 650V
Fast switching and low power losses
Wide operating temperature range of -40°C to 175°C