Manufacturer Part Number
STPSC1006D
Manufacturer
STMicroelectronics
Introduction
High-performance silicon carbide (SiC) Schottky diode
Product Features and Performance
Ultra-fast switching speed with no reverse recovery time
Low forward voltage drop
High current carrying capability
Wide operating temperature range (-40°C to 175°C)
Reliable and robust design
Product Advantages
Superior efficiency compared to traditional silicon diodes
Reduced power losses and improved system performance
Simplified circuit design due to fast switching capabilities
Compact and lightweight solution
Key Technical Parameters
Reverse Voltage (Vr): 600V
Forward Current (Io): 10A
Forward Voltage (Vf): 1.75V @ 10A
Reverse Leakage Current (Ir): 300µA @ 600V
Capacitance (Cr): 650pF @ 0V, 1MHz
Reverse Recovery Time (trr): 0ns
Quality and Safety Features
RoHS3 compliant
Robust TO-220AC package
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Renewable energy systems
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent efficiency and performance due to SiC technology
Fast switching capabilities for simplified circuit design
Wide operating temperature range for versatile applications
Reliable and robust design for long-term operation
RoHS3 compliance for environmental sustainability