Manufacturer Part Number
STP80N70F4
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor
Part of the DeepGATE and STripFET series
Product Features and Performance
Operating temperature range: -55°C to 175°C
Drain-to-source voltage (Vdss): 68V
Maximum gate-to-source voltage (Vgs): ±20V
On-state resistance (Rds(on)): 9.8mΩ @ 40A, 10V
Continuous drain current (Id): 85A @ 25°C
Input capacitance (Ciss): 5600pF @ 25V
Power dissipation (max): 150W
Product Advantages
High efficiency and low on-state resistance
Suitable for high-power and high-frequency applications
Robust and reliable performance
Key Technical Parameters
MOSFET technology: N-Channel
Threshold voltage (Vgs(th)): 4V @ 250A
Gate charge (Qg): 90nC @ 10V
Mounting type: Through-hole (TO-220 package)
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Compatibility
Compatible with a wide range of electronic systems and power supplies
Application Areas
Power supplies
Motor drives
Switching power converters
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High-performance and efficient power handling capabilities
Robust and reliable design for demanding applications
Compatibility with a wide range of electronic systems
Compliance with industry standards and regulations
STP80N70F4 80N70F4STMicroelectronics
STP80N06-10VBsemi