Manufacturer Part Number
STP80N6F6
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET with low on-resistance, suitable for automotive and industrial applications.
Product Features and Performance
Low on-resistance (Rds(on) = 5.8 mΩ @ 50 A, 10 V)
High current capability (Id = 110 A @ 25°C)
Wide operating temperature range (-55°C to 175°C)
High blocking voltage (Vdss = 60 V)
Fast switching and low gate charge (Qg = 122 nC @ 10 V)
Product Advantages
Excellent thermal management
Robust and reliable design
Suitable for high-power automotive and industrial applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 5.8 mΩ @ 50 A, 10 V
Continuous Drain Current (Id): 110 A @ 25°C
Input Capacitance (Ciss): 7480 pF @ 25 V
Power Dissipation (Ptot): 120 W @ Tc
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Robust and reliable design for harsh environments
Compatibility
Compatible with a wide range of automotive and industrial applications
Application Areas
Automotive: Motor drives, power inverters, power steering, etc.
Industrial: Power supplies, motor drives, welding equipment, etc.
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options are available from STMicroelectronics.
Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-resistance
Robust and reliable design for automotive and industrial applications
Wide operating temperature range and high current capability
Fast switching and low gate charge for improved system efficiency
RoHS3 compliance and AEC-Q101 qualification for quality assurance
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