Manufacturer Part Number
STP5N80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance power MOSFET device
Product Features and Performance
800V drain-source voltage rating
Low on-resistance (1.75Ω @ 2A, 10V)
High continuous drain current (4A @ 25°C)
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (177pF @ 100V)
Low gate charge (5nC @ 10V)
Product Advantages
Excellent power handling and efficiency
Suitable for high-voltage, high-current applications
Robust and reliable performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.75Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 177pF @ 100V
Power Dissipation (Pd): 60W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature, high-voltage, and high-power applications
Compatibility
Through-hole mounting (TO-220 package)
Compatible with various high-voltage, high-power circuit designs
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
High-voltage power conversion
Product Lifecycle
Currently in active production
No planned discontinuation
Replacements and upgrades available if required
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable performance
Wide operating temperature range
Suitable for high-voltage, high-current applications
RoHS3 compliance for environmental sustainability
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