Manufacturer Part Number
STP5N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Part of the MDmesh II Plus series
Product Features and Performance
High voltage rating of 600V
Low on-resistance of 1.4Ω
Continuous drain current of 3.7A
Wide operating temperature range up to 150°C
Low gate charge of 4.5nC
Fast switching speed
Product Advantages
Excellent power density and efficiency
Reliable and robust design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 1.4Ω
Continuous Drain Current (Id): 3.7A
Input Capacitance (Ciss): 165pF
Power Dissipation: 45W
Quality and Safety Features
RoHS3 compliant
TO-220 package for reliable mounting and thermal management
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently in production and available
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and robust design
Wide operating temperature range
Fast switching speed for improved system performance
RoHS3 compliance for environmental responsibility
STP5NA60STMicroelectronics
STP5N60VBsemi