Manufacturer Part Number
STP23NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel power MOSFET
Product Features and Performance
600V breakdown voltage
Ultra-low on-resistance
High current handling capability
Fast switching and low gate charge
Excellent thermal performance
Product Advantages
Optimized for efficient power conversion
Suitable for high-voltage, high-power applications
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 180mΩ @ 10A, 10V
Continuous Drain Current (Id): 19.5A @ 25°C
Input Capacitance (Ciss): 2100pF @ 50V
Power Dissipation (Tc): 150W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
TO-220 package
Compatible with standard power MOSFET drivers
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and robust design for demanding applications
Wide operating temperature range up to 150°C
Easy integration and compatibility with standard power electronics
Availability of replacements and upgrades