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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleSTP23NM50N
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STP23NM50N - STMicroelectronics

Manufacturer Part Number
STP23NM50N
Manufacturer
STMicroelectronics
Allelco Part Number
32D-STP23NM50N
ECAD Model
Parts Description
MOSFET N-CH 500V 17A TO220-3
Detailed Description
Package
TO-220-3
Data sheet
STx23NM50N.pdf
RoHs Status
ROHS3 Compliant
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Specifications

STP23NM50N Tech Specifications
STMicroelectronics - STP23NM50N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics - STP23NM50N

Product Attribute Attribute Value  
Manufacturer STMicroelectronics  
Vgs(th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±25V  
Technology MOSFET (Metal Oxide)  
Supplier Device Package TO-220  
Series MDmesh™ II  
Rds On (Max) @ Id, Vgs 190mOhm @ 8.5A, 10V  
Power Dissipation (Max) 125W (Tc)  
Package / Case TO-220-3  
Package Tube  
Product Attribute Attribute Value  
Operating Temperature 150°C (TJ)  
Mounting Type Through Hole  
Input Capacitance (Ciss) (Max) @ Vds 1330 pF @ 50 V  
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V  
FET Type N-Channel  
FET Feature -  
Drive Voltage (Max Rds On, Min Rds On) 10V  
Drain to Source Voltage (Vdss) 500 V  
Current - Continuous Drain (Id) @ 25°C 17A (Tc)  
Base Product Number STP23  

Parts Introduction

Manufacturer Part Number

STP23NM50N

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

N-Channel MOSFET

500V Drain to Source Voltage

190mOhm Rds(on) at 8.5A, 10V

17A Continuous Drain Current at 25°C

1330pF Input Capacitance at 50V

125W Power Dissipation

4V Threshold Voltage at 250A

45nC Gate Charge at 10V

Product Advantages

High Voltage MOSFET

Low On-State Resistance

High Drain Current Capability

Suitable for Switching Applications

Key Technical Parameters

Drain to Source Voltage: 500V

Gate to Source Voltage: ±25V

On-State Resistance: 190mOhm

Continuous Drain Current: 17A

Input Capacitance: 1330pF

Power Dissipation: 125W

Threshold Voltage: 4V

Quality and Safety Features

RoHS3 Compliant

TO-220 Package

150°C Maximum Junction Temperature

Compatibility

Compatible with various switching and power supply applications

Application Areas

Switching Power Supplies

Motor Drives

Inductive Load Switching

Industrial Controls

Product Lifecycle

Active product

Replacement or upgrade options may be available

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-state resistance for efficient operation

Suitable for a wide range of switching applications

Reliable performance with RoHS3 compliance and high temperature rating

Parts with Similar Specifications

The three parts on the right have similar specifications to STMicroelectronics STP23NM50N

Product Attribute STP23NM50N STP240N10F7 STP23NM60N STP23NM60ND
Part Number STP23NM50N STP240N10F7 STP23NM60N STP23NM60ND
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Series MDmesh™ II DeepGATE™, STripFET™ VII MDmesh™ II FDmesh™ II
Rds On (Max) @ Id, Vgs 190mOhm @ 8.5A, 10V 3.2mOhm @ 60A, 10V 180mOhm @ 9.5A, 10V 180mOhm @ 10A, 10V
Power Dissipation (Max) 125W (Tc) 300W (Tc) 150W (Tc) 150W (Tc)
FET Feature - - - -
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Drain to Source Voltage (Vdss) 500 V 100 V 600 V 600 V
Base Product Number STP23 STP240 STP23N STP23N
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 176 nC @ 10 V 60 nC @ 10 V 69 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 180A (Tc) 19A (Tc) 19.5A (Tc)
Supplier Device Package TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Temperature 150°C (TJ) -55°C ~ 175°C (TJ) 150°C (TJ) 150°C (TJ)
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA 4V @ 250µA 5V @ 250µA
Vgs (Max) ±25V ±20V ±25V ±25V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package Tube Tube Tube Tube
Input Capacitance (Ciss) (Max) @ Vds 1330 pF @ 50 V 12600 pF @ 25 V 2050 pF @ 50 V 2100 pF @ 50 V
FET Type N-Channel N-Channel N-Channel N-Channel

STP23NM50N Datasheet PDF

Download STP23NM50N pdf datasheets and STMicroelectronics documentation for STP23NM50N - STMicroelectronics.

Datasheets
STx23NM50N.pdf
PCN Design/Specification
Mult Dev Adv Material Notice 8/Apr/2019.pdf
PCN Assembly/Origin
Mult Dev Site Closure 13/Feb/2020.pdf
PCN Packaging
Traceability 06/Mar/2017.pdf

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Delivery Cost

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  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

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    +00852 9146 4856

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STP23NM50N Image

STP23NM50N

STMicroelectronics
32D-STP23NM50N

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