Manufacturer Part Number
STP170N8F7
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Designed for high-power switching applications
Product Features and Performance
Operating temperature range: -55°C to 175°C
Drain-to-source voltage (Vdss): 80V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 3.9mΩ @ 60A, 10V
Continuous drain current (Id): 120A @ 25°C
Input capacitance (Ciss): 8710pF @ 40V
Power dissipation: 250W @ 25°C
Product Advantages
Excellent thermal management
High current handling capability
Low on-resistance for high efficiency
Suitable for high-power switching applications
Key Technical Parameters
MOSFET technology
N-channel
Threshold voltage (Vgs(th)): 4.5V @ 250A
Gate charge (Qg): 120nC @ 10V
Through-hole mounting
Quality and Safety Features
RoHS3 compliant
TO-220 package
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
High-performance power MOSFET with excellent thermal management
Suitable for high-power switching applications requiring high current and low on-resistance
Proven reliability and quality from STMicroelectronics
Versatile application potential in various industrial and automotive electronics