Manufacturer Part Number
STP14N80K5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in a TO-220 package
Product Features and Performance
High breakdown voltage of 800V
Low on-resistance (RDS(on)) of 445mΩ
High drain current capability of 12A at 25°C
Low input capacitance of 620pF
Wide operating temperature range of -55°C to 150°C
Low gate charge of 22nC
Product Advantages
Excellent power efficiency
Reliable and robust performance
Suitable for high-voltage and high-current applications
Key Technical Parameters
Drain to Source Voltage (VDS): 800V
Gate to Source Voltage (VGS): ±30V
Continuous Drain Current (ID): 12A at 25°C
On-resistance (RDS(on)): 445mΩ at 6A, 10V
Input Capacitance (Ciss): 620pF at 100V
Power Dissipation (Tc): 130W
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and consumer applications
Compatibility
TO-220 package for easy mounting and replacement
Application Areas
Switching power supplies
Motor drives
Induction heating
Industrial and consumer electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent power efficiency through low on-resistance
Reliable and robust performance across a wide temperature range
Suitable for various high-power applications
RoHS3 compliance for environmental friendliness