Manufacturer Part Number
STP140NF55
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
Wide drain-to-source voltage range of 55V
Very low on-resistance of 8mΩ @ 40A, 10V
High drain current capability of 80A @ 25°C
Fast switching speed and low gate charge of 142nC @ 10V
Wide operating temperature range of -55°C to 175°C
Robust design and high power dissipation of 300W
Product Advantages
Excellent efficiency and power density
Reliable and durable performance
Versatile for a wide range of power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 55V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 8mΩ @ 40A, 10V
Drain Current (Id): 80A @ 25°C
Power Dissipation (Ptot): 300W
Input Capacitance (Ciss): 5300pF @ 25V
Gate Charge (Qg): 142nC @ 10V
Quality and Safety Features
RoHS3 compliant
TO-220 package for reliable thermal performance
Designed for high reliability and safety
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose
Excellent power handling and efficiency
Reliable and robust performance
Versatile for diverse power applications
Cost-effective solution for power electronics