Manufacturer Part Number
STP13NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel Power MOSFET with low on-resistance
Product Features and Performance
High blocking voltage of 600V
Low on-resistance of 380mΩ
High continuous drain current of 11A
Low input capacitance of 845pF
High power dissipation of 109W
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
Efficient power conversion and switching
Reliable and robust performance
Suitable for a wide range of applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 380mΩ @ 5.5A, 10V
Continuous Drain Current (Id): 11A
Input Capacitance (Ciss): 845pF @ 50V
Power Dissipation (Ptot): 109W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature and high-power applications
Compatibility
Through-hole TO-220 package
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
High efficiency and power handling capability
Low on-resistance for improved energy efficiency
Wide operating temperature range for versatile applications
Robust and reliable performance for demanding environments
Compatibility with standard TO-220 package for easy integration
STP13N80K5 MOSSTMicroelectronics
STP13NK60ZFPSTMicroelectronicsMOSFET N-CH 600V 13A TO220FP