Manufacturer Part Number
STN851-A
Manufacturer
STMicroelectronics
Introduction
NPN Bipolar Junction Transistor (BJT)
Designed for general-purpose amplifier and switching applications
Product Features and Performance
Operating temperature up to 150°C
Power handling capability up to 1.6W
High collector-emitter breakdown voltage of 60V
High collector current rating of 5A
High DC current gain of 150 at 2A, 1V
High transition frequency of 130MHz
Product Advantages
Robust and reliable performance
Versatile in various amplifier and switching applications
Efficient power handling and thermal management
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 60V
Collector Current (Max): 5A
DC Current Gain (hFE) (Min): 150 @ 2A, 1V
Transition Frequency (Typical): 130MHz
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Compatibility
Surface mount TO-261-4, TO-261AA package
Available in Tape and Reel (TR) packaging
Application Areas
General-purpose amplifiers
Switching circuits
Industrial and automotive electronics
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Robust and reliable performance
Excellent power handling and thermal management
High DC current gain and transition frequency
Versatile in various amplifier and switching applications
RoHS3 compliance for industrial and automotive use
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