Manufacturer Part Number
STN83003
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) - Single
Product Features and Performance
Operating Temperature: 150°C (TJ)
Power Rating: 1.6 W (Max)
Collector-Emitter Breakdown Voltage: 400 V (Max)
Collector Current: 1.5 A (Max)
Collector Cutoff Current: 1 mA (Max)
Collector-Emitter Saturation Voltage: 500 mV @ 100 mA, 500 mA
DC Current Gain (hFE): 16 (Min) @ 350 mA, 5 V
Product Advantages
High power handling capability
High voltage operation
Compact surface mount package
Key Technical Parameters
Transistor Type: NPN
Mounting Type: Surface Mount
Package: TO-261-4, TO-261AA, SOT-223
Packaging: Tape & Reel (TR)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuits and systems requiring high power, high voltage bipolar junction transistors
Application Areas
Industrial and automotive electronic circuits
Power supplies and converters
Motor control systems
Amplifiers and switches
Product Lifecycle
Current production model, no plans for discontinuation
Replacement and upgrade options available from the manufacturer
Key Reasons to Choose this Product
Robust high power and high voltage performance
Compact and efficient surface mount package
Reliable and proven technology from a reputable manufacturer
Compliance with relevant safety and environmental regulations
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