Manufacturer Part Number
STN2NE10L
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel enhancement-mode power MOSFET in a small SOT-223 package.
Product Features and Performance
Suitable for switching and amplifier applications
Fast switching speed
Low on-resistance
Low gate charge
High power density
Product Advantages
Compact SOT-223 package
Low power dissipation
High reliability
Excellent thermal performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 400mΩ @ 1A, 10V
Continuous Drain Current (Id): 1.8A @ 25°C (Tc)
Input Capacitance (Ciss): 345pF @ 25V
Power Dissipation (Ptot): 2.5W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Compatible with various electronic devices and circuits
Application Areas
Switching power supplies
Motor drives
Lighting control
Industrial and consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
High performance in a compact package
Excellent thermal management
Reliable and durable
Cost-effective solution for power switching applications
STN2907SAUK