Manufacturer Part Number
STN2NE10
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor in a surface mount package.
Product Features and Performance
100V drain-source voltage
2A continuous drain current
400mΩ maximum on-resistance
305pF maximum input capacitance
19nC maximum gate charge
150°C maximum junction temperature
ROHS3 compliant
Product Advantages
Efficient power switching
Low on-resistance for low power loss
Compact surface mount package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 400mΩ @ 1A, 10V
Drain Current (Id): 2A continuous @ 25°C
Input Capacitance (Ciss): 305pF @ 25V
Gate Charge (Qg): 19nC @ 10V
Quality and Safety Features
ROHS3 compliant
150°C maximum junction temperature
Compatibility
Suitable for surface mount applications
Compatible with TO-261-4, TO-261AA packages
Application Areas
Switching power supplies
Motor drives
Inverters
DC-DC converters
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade models may be available in the future
Key Reasons to Choose This Product
Efficient power switching performance
Low on-resistance for low power loss
Compact surface mount package
Suitable for high-frequency switching applications
ROHS3 compliant for environmental responsibility
STN2NE10L-TRVBSEMI
STN2580STMicroelectronicsTRANS NPN 400V 1A SOT223