Manufacturer Part Number
STL11N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with low on-resistance, designed for high-voltage, high-frequency and high-power applications.
Product Features and Performance
650V breakdown voltage
Low on-resistance of 530mΩ
High continuous drain current of 8.5A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed
Low gate charge of 17nC
Low input capacitance of 644pF
Product Advantages
Efficient power conversion and management
Reliable operation in high-voltage, high-frequency and high-power applications
Compact and robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Gate to Source Voltage (Vgs): ±25V
On-resistance (Rds(on)): 530mΩ
Continuous Drain Current (Id): 8.5A
Input Capacitance (Ciss): 644pF
Power Dissipation (Tc): 70W
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for industrial applications
Compatibility
Suitable for high-voltage, high-frequency and high-power applications, such as switching power supplies, motor drives, and industrial automation.
Application Areas
Switching power supplies
Motor drives
Industrial automation
Power conversion and management
Product Lifecycle
This product is currently in active production and is not scheduled for discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Several Key Reasons to Choose This Product
Excellent performance characteristics, including high breakdown voltage, low on-resistance, and high current handling capability.
Reliable and robust design for industrial applications.
Compact and efficient power conversion and management.
Compatibility with a wide range of high-voltage, high-frequency, and high-power applications.