STL11N65M2 - STMicroelectronics

Manufacturer Part Number

STL11N65M2

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel enhancement-mode power MOSFET

Product Features and Performance

High breakdown voltage (650V)

Low on-resistance (670mΩ @ 3.5A, 10V)

High continuous drain current (7A @ 25°C)

Fast switching speed

Wide operating temperature range (-55°C to 150°C)

Low gate charge (12.4nC @ 10V)

Product Advantages

Efficient power conversion and control

Reliable and robust design

Suitable for a wide range of high-voltage, high-power applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 650V

Gate to Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 670mΩ @ 3.5A, 10V

Continuous Drain Current (Id): 7A @ 25°C

Input Capacitance (Ciss): 410pF @ 100V

Power Dissipation (Tc): 85W

Quality and Safety Features

RoHS3 compliant

Designed for reliable and safe operation

Compatibility

Suitable for a wide range of high-voltage, high-power applications, such as:

Switch-mode power supplies

Motor drives

Inverters

Industrial and consumer electronics

Application Areas

Power conversion and control

High-voltage, high-power applications

Industrial and consumer electronics

Product Lifecycle

This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available from STMicroelectronics.

Key Reasons to Choose This Product

High breakdown voltage and low on-resistance for efficient power conversion

Fast switching speed and low gate charge for improved system performance

Wide operating temperature range and robust design for reliable operation

Compatibility with a variety of high-voltage, high-power applications

Backed by the quality and expertise of STMicroelectronics