Manufacturer Part Number
STL11N65M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel enhancement-mode power MOSFET
Product Features and Performance
High breakdown voltage (650V)
Low on-resistance (670mΩ @ 3.5A, 10V)
High continuous drain current (7A @ 25°C)
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
Low gate charge (12.4nC @ 10V)
Product Advantages
Efficient power conversion and control
Reliable and robust design
Suitable for a wide range of high-voltage, high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Gate to Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 670mΩ @ 3.5A, 10V
Continuous Drain Current (Id): 7A @ 25°C
Input Capacitance (Ciss): 410pF @ 100V
Power Dissipation (Tc): 85W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of high-voltage, high-power applications, such as:
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Application Areas
Power conversion and control
High-voltage, high-power applications
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available from STMicroelectronics.
Key Reasons to Choose This Product
High breakdown voltage and low on-resistance for efficient power conversion
Fast switching speed and low gate charge for improved system performance
Wide operating temperature range and robust design for reliable operation
Compatibility with a variety of high-voltage, high-power applications
Backed by the quality and expertise of STMicroelectronics
STL10N65M2STMicroelectronicsMOSFET N-CH 650V 4.5A POWERFLAT