Manufacturer Part Number
STFI4N62K3
Manufacturer
STMicroelectronics
Introduction
N-channel power MOSFET transistor
Designed for high-voltage and high-power switching applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 620V
Typical on-resistance (Rds(on)) of 2Ω at 1.9A, 10V
Continuous drain current (Id) of 3.8A at 25°C case temperature
Low input capacitance (Ciss) of 550pF at 50V
Power dissipation (Ptot) of 25W at 25°C case temperature
Wide operating temperature range up to 150°C
Product Advantages
Excellent power handling capabilities
Robust and reliable MOSFET design
Suitable for high-voltage, high-power switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 620V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 2Ω @ 1.9A, 10V
Threshold voltage (Vgs(th)): 4.5V @ 50A
Input capacitance (Ciss): 550pF @ 50V
Power dissipation (Ptot): 25W @ 25°C
Quality and Safety Features
RoHS3 compliant
Fully qualified for industrial and automotive applications
Compatibility
Compatible with various high-voltage, high-power switching circuits
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive applications
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from STMicroelectronics
Key Reasons to Choose This Product
Excellent power handling capabilities
Robust and reliable MOSFET design
Suitable for a wide range of high-voltage, high-power switching applications
RoHS3 compliance and industrial/automotive qualification
Availability and potential replacement/upgrade options from the manufacturer