Manufacturer Part Number
STFI26N60M2
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
I2PAKFP (TO-281) Packaging
TO-262-3 Full Pack, IPak Package
MDmesh Series
MOSFET (Metal Oxide) Technology
N-Channel FET Type
Operating Temperature Range: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±25V
Maximum On-State Resistance (Rds On): 165mΩ @ 11A, 10V
Continuous Drain Current (Id) @ 25°C: 20A (Tc)
Maximum Power Dissipation: 30W (Tc)
Threshold Voltage (Vgs(th)): 4V @ 250A
Drive Voltage Range: 10V (Max Rds On, Min Rds On)
Through Hole Mounting Type
Product Advantages
High voltage and current capability
Low on-state resistance
Wide operating temperature range
Compact and efficient package design
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±25V
Maximum On-State Resistance (Rds On): 165mΩ @ 11A, 10V
Continuous Drain Current (Id) @ 25°C: 20A (Tc)
Maximum Power Dissipation: 30W (Tc)
Threshold Voltage (Vgs(th)): 4V @ 250A
Quality and Safety Features
RoHS3 Compliant
Reliable MOSFET technology
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades are available
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-state resistance for efficient power conversion
Wide operating temperature range for versatile applications
Compact and efficient package design for space-constrained designs
Proven MOSFET technology for reliable performance
RoHS3 compliance for environmentally-friendly solutions
STFI13N60M2STMicroelectronicsMOSFET N-CH 600V 11A I2PAKFP