Manufacturer Part Number
STF21N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
650V drain-to-source voltage rating
Low on-resistance of 190mΩ at 8.5A, 10V
High current capability of 17A continuous drain current at 25°C
Fast switching characteristics
Low gate charge of 50nC at 10V
Wide operating temperature range up to 150°C
Product Advantages
Excellent efficiency and thermal performance
Robust design for reliable operation
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 190mΩ @ 8.5A, 10V
Drain Current (Id): 17A @ 25°C
Input Capacitance (Ciss): 1950pF @ 100V
Power Dissipation (Pd): 30W @ 25°C
Quality and Safety Features
RoHS3 compliant
Housed in a TO-220FP package for reliable operation
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-power applications
Robust and reliable design for long-term operation
Wide operating temperature range up to 150°C
Fast switching characteristics for high-frequency applications
Low on-resistance and high current capability for improved system efficiency
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